Pseudo CMOS Logic Indium Tin Oxide Thin Film Transistor ZnO for Transparent Electronics

Abstract

In this study, Pseudo-CMOS digital circuits were implemented and investigated using n-type indium tin oxide stabilized ‘ZnO’ thin film transistors (TFTs). The optical transmittance of the circuit varies between 78% and 91% along the light path. The operating frequency of the circuit was found to be greater than 10 kHz at a supply voltage of 9 to10 V. This inverter produced a maximum latency of 4 µs at a nominal voltage of 10 V and VDS = 0.5 V. The delay of the circuit is 1.78 micro sec. and the power/energy is 0. 385nJ.This results gives the advantage of the reduction of the 70% energy or power.

Switching transistor circuits with logic have been developed shaped on “n-type indium tin oxide” (ITO) “ZnO” thin film transistor ("TFT") technology. The logic oscillation of electronic devices with pure n-type ‘TFT’ transistor logic circuits are discussed in detail to expand the characteristics of the systems. In order to accomplish better performance, the performance of various "OR" operations, control logic comparison style, and better speed and smaller area are adopted. All circuits are completed of transparent glass sheets.